This article discusses the applications of Moore's Law in technological progress in the semiconductor industry for 50 years. Semiconductors play a critical role in the foundation of communications systems and form the basis of the Internet of Everything (IoE). However, the future predictions of Moore's Law were not considered valid after 50 years due to its ambiguous prediction since it was not a physical or natural law but a simple observation by Gordon Moore. The current scenario of increasing cost and efficiency of integrated circuits poses a challenge to the development aspect. The introduction of 3D transistors that improve the capabilities of CMOS technology leads to an increase in capabilities. In addition to the expansion of CMOS technology beyond 14 nm, there are cutting-edge technology options beyond CMOS on the horizon with potential design advantages that can advance Moore's Law into the future. Say no to plagiarism. Get a tailor-made essay on "Why Violent Video Games Shouldn't Be Banned"? Get an original essay Since this article is mainly about the concept of Moore's law, we will first define what this law consists of. Moore's Law states that "the number of transistors used in integrated circuits doubles every year." This law has given many benefits to the field of electronic technology by decreasing the cost of high power equipment which has decreased to a greater extent. Machines that applied Moore's law were faster than those that didn't. The transitions that have continued in recent years, i.e. from bipolar to MOSFETs, to CMOS, to voltage scaling and efficient power scaling, have contributed significantly to the current scenario of silicon technology developments. The trend toward creating high-quality digital capabilities from integrated analog components such as PLLs, I/O, and thermal sensors has an application to enhance Intel's leading technology, namely 22nm to 14nm technology nodes. In contrast, microprocessor clock rates have seen relatively slow improvement over the past few decades as there has been an increased push toward power-efficient parallel architectures. But improvements in areal density and power should also keep pace with aggregate system bandwidth requirements. A type of semiconductor memory that uses flip-flops to store bits called static random access memory remains the workhorse for all various VLSI applications. But voltage scaling for power efficiency has made it difficult to operate memory at lower voltages. The more advanced 14nm FINFET has improved SRAM voltages. With ever-increasing memory requirements for new applications such as high-resolution graphics and cloud computing, traditional memories are not enough. So the use of capacitor inside an integrated circuit serving the purpose of semiconductor random access memory called DRAM (Dynamic Random Access Memory) and EDRAM was an alternative. System-level optimization is necessary to gain the full benefits of these new technologies as we move forward. An extension beyond the 2D scaling trajectory predicted by Moore's law, called monolithic 3D (M-3D), emerged as an alternative to integration technology that significantly reduced the gaps between transistors and the interconnect delays that added to achieve high performance at low cost. But logic-logic memory integration still remains an open area. The use of a multichip interconnect bridge.